FF450R12ME4BOSA1

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FF450R12ME4BOSA1 - Infineon
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Краткое описание: IGBT 1.2kV 675A 2.25kW FLANGE MOUNT
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

The FF450R12ME4BOSA1 is a 1.2kV insulated gate bipolar transistor with a maximum collector current of 675A and a maximum power dissipation of 2.25kW. It is packaged in a flange mount with a width of 62mm and a length of 152.1mm. The device is RoHS compliant and has a maximum operating temperature of 150°C and a minimum operating temperature of -40°C.
RoHS Compliant
Input Standard
Mount Chassis Mount, PCB, Screw
Width 62mm
Height 20.8mm
Length 152.1mm
Packaging Bulk
Package/Case Module
NTC Thermistor Yes
RoHS Compliant Yes
Package Quantity 10
Input Capacitance 28nF
Power Dissipation 2.25kW
Max Collector Current 675A
Max Power Dissipation 2.25kW
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Collector-emitter Voltage-Max 2.1V
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 2.1V

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