FG6943010R
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N/P-Channel JFET, 30V, 100mA, SOT-666, Surface Mount
Дополнительная информация
N-Channel and P-Channel Silicon Junction Field-Effect Transistor (JFET) for small signal applications. Features a 30V Drain to Source Voltage (Vdss) and 100mA Continuous Drain Current (ID). Surface mountable in a SOT-666 package, this device offers a Drain to Source Resistance of 17 Ohms and a Threshold Voltage of 1V. Operating temperature range from -40°C to 85°C with a maximum power dissipation of 125mW. HALOGEN FREE and ROHS COMPLIANT.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.2mm |
| Height | 0.5mm |
| Length | 1.6mm |
| FET Type | N and P-Channel |
| Polarity | P-CHANNEL |
| Packaging | Tape and Reel |
| Nominal Vgs | 1V |
| Package/Case | SOT-666 |
| RoHS Compliant | Yes |
| Package Quantity | 8000 |
| Input Capacitance | 12pF |
| Threshold Voltage | 1V |
| Turn-On Delay Time | 100ns |
| Turn-Off Delay Time | 100ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 125mW |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Drain to Source Resistance | 17R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | -30V |
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