FGH40N60SMD
Производится
Увеличить
Краткое описание:
IGBT TO-247 600V 80A 349W
Дополнительная информация
The FGH40N60SMD is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 80A. It is packaged in a TO-247 case and is designed for through-hole mounting. The device has a maximum power dissipation of 349W and operates over a temperature range of -55°C to 175°C. It is RoHS compliant and lead free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.7mm |
| Height | 20.6mm |
| Length | 15.6mm |
| Weight | 6.39g |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Input Type | STANDARD |
| Package/Case | TO-247 |
| RoHS Compliant | Yes |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Collector Current | 80A |
| Max Power Dissipation | 349W |
| Reverse Recovery Time | 36ns |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Collector-emitter Voltage-Max | 2.5V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.1V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
