FGH40N60UFDTU

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FGH40N60UFDTU - Onsemi
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Краткое описание: 600V 80A IGBT TO-247-3 Field Stop Transistor
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and 80A Continuous Collector Current. This device offers a low 2.4V Collector-Emitter Saturation Voltage and a maximum power dissipation of 290W. Designed for through-hole mounting in a TO-247-3 package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 24ns turn-on delay and 112ns turn-off delay, with a 45ns reverse recovery time.
RoHS Compliant
Mount Through Hole
Width 4.7mm
Height 20.6mm
Length 15.6mm
Weight 6.39g
Lead Free Lead Free
Packaging Rail/Tube
Input Type STANDARD
Package/Case TO-247-3
RoHS Compliant Yes
Package Quantity 150
Power Dissipation 290W
Turn-On Delay Time 24ns
Radiation Hardening No
Turn-Off Delay Time 112ns
Reach SVHC Compliant No
Max Collector Current 80A
Max Power Dissipation 290W
Reverse Recovery Time 45ns
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Continuous Collector Current 80A
Collector-emitter Voltage-Max 2.4V
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 600V

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