Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector Emitter Breakdown Voltage and a maximum Collector Current of 60A. Features a low Collector Emitter Saturation Voltage of 2.4V and a fast Turn-On Delay Time of 23ns. Packaged in a TO-247AB through-hole mount with a maximum power dissipation of 298W. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
| RoHS |
Compliant |
| Mount |
Through Hole |
| Width |
4.7mm |
| Height |
20.6mm |
| Length |
15.6mm |
| Weight |
6.39g |
| Lead Free |
Lead Free |
| Packaging |
Rail/Tube |
| Input Type |
STANDARD |
| Package/Case |
TO-247AB |
| RoHS Compliant |
Yes |
| Package Quantity |
30 |
| Turn-On Delay Time |
23ns |
| Radiation Hardening |
No |
| Turn-Off Delay Time |
130ns |
| Reach SVHC Compliant |
No |
| Max Collector Current |
60A |
| Max Power Dissipation |
298W |
| Reverse Recovery Time |
47ns |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Collector-emitter Voltage-Max |
2.4V |
| Collector Emitter Voltage (VCEO) |
600V |
| Collector Emitter Breakdown Voltage |
600V |
| Collector Emitter Saturation Voltage |
600V |