FGH60N60UFDTU

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FGH60N60UFDTU - Onsemi
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Краткое описание: 600V 60A IGBT TO-247 Low VCE(ON) Field Stop Transistor
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector Emitter Breakdown Voltage and a maximum Collector Current of 60A. Features a low Collector Emitter Saturation Voltage of 2.4V and a fast Turn-On Delay Time of 23ns. Packaged in a TO-247AB through-hole mount with a maximum power dissipation of 298W. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
RoHS Compliant
Mount Through Hole
Width 4.7mm
Height 20.6mm
Length 15.6mm
Weight 6.39g
Lead Free Lead Free
Packaging Rail/Tube
Input Type STANDARD
Package/Case TO-247AB
RoHS Compliant Yes
Package Quantity 30
Turn-On Delay Time 23ns
Radiation Hardening No
Turn-Off Delay Time 130ns
Reach SVHC Compliant No
Max Collector Current 60A
Max Power Dissipation 298W
Reverse Recovery Time 47ns
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Collector-emitter Voltage-Max 2.4V
Collector Emitter Voltage (VCEO) 600V
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 600V