FJBE2150DTU
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NPN BJT Transistor, 800V, 2A, TO-263, Surface Mount
Дополнительная информация
NPN Silicon Transistor, ESBC™ rated, designed for surface mount applications in a TO-263-3 package. Features a maximum collector current of 2A, a collector-emitter breakdown voltage of 800V, and a collector-emitter saturation voltage of 250mV. Offers a minimum hFE of 20 and a transition frequency of 5MHz. Operates within a temperature range of -55°C to 125°C, with a maximum power dissipation of 110W. This lead-free, RoHS compliant component is supplied in a rail/tube package.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.85mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | ESBC™ |
| Weight | 1.88g |
| hFE Min | 20 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-263-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Radiation Hardening | No |
| Transition Frequency | 5MHz |
| Max Collector Current | 2A |
| Max Power Dissipation | 110W |
| Gain Bandwidth Product | 5MHz |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 12V |
| Gate to Source Voltage (Vgs) | 20V |
| Collector Base Voltage (VCBO) | 1.5kV |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Breakdown Voltage | 800V |
| Collector Emitter Saturation Voltage | 250mV |
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