FJE5304D
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Краткое описание:
NPN BJT Transistor, 400V VCEO, 4A IC, TO-126
Дополнительная информация
NPN triple diffused planar silicon transistor in a TO-126 package, designed for through-hole mounting. Features a 400V collector-emitter breakdown voltage and a 4A maximum collector current. Offers a maximum power dissipation of 30W and operates within a temperature range of -65°C to 150°C. This RoHS compliant component is lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | FJE5304D |
| Weight | 0.761g |
| hFE Min | 8 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Package/Case | TO-126 |
| Current Rating | 4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 400V |
| Package Quantity | 250 |
| Power Dissipation | 30W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Max Collector Current | 4A |
| Max Power Dissipation | 30W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Emitter Base Voltage (VEBO) | 12V |
| Collector Base Voltage (VCBO) | 700V |
| Collector-emitter Voltage-Max | 1.5V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector Emitter Breakdown Voltage | 400V |
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