FJL4215OTU
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Краткое описание:
PNP BJT Transistor, -250V VCBO, -13A IC, 150W PD, TO-264
Дополнительная информация
PNP Epitaxial Silicon Transistor featuring a TO-264 package for through-hole mounting. This bipolar junction transistor offers a maximum collector current of 17A and a continuous collector current of -13A. Key electrical specifications include a collector-emitter voltage (VCEO) of 250V and a transition frequency of 30MHz. With a maximum power dissipation of 150W and an operating temperature range of -50°C to 150°C, it is also lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5mm |
| Height | 26mm |
| Length | 20mm |
| Weight | 6.756g |
| hFE Min | 55 |
| Polarity | PNP |
| Frequency | 30MHz |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Package/Case | TO-264 |
| Max Frequency | 30MHz |
| Current Rating | -13A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -230V |
| Package Quantity | 25 |
| Power Dissipation | 150W |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Transition Frequency | 30MHz |
| Max Collector Current | 17A |
| Max Power Dissipation | 150W |
| Gain Bandwidth Product | 30MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Emitter Base Voltage (VEBO) | -5V |
| Collector Base Voltage (VCBO) | -250V |
| Collector-emitter Voltage-Max | 3V |
| Collector Emitter Voltage (VCEO) | 250V |
| Collector Emitter Breakdown Voltage | 250V |
| Collector Emitter Saturation Voltage | -400mV |
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