FJPF3305H1TU

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FJPF3305H1TU - Onsemi
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Краткое описание: NPN BJT Transistor, 400V VCEO, 4A IC, TO-220
Производитель Onsemi
Статус производства Производится (ACTIVE)

Дополнительная информация

NPN Silicon Transistor for through-hole mounting in a TO-220-3 package. Features a 400V Collector-Emitter Voltage (VCEO) and 4A maximum collector current. Offers a 4MHz transition frequency and 30W maximum power dissipation. Operates across a wide temperature range from -65°C to 150°C. This RoHS compliant component is lead-free.
RoHS Compliant
Mount Through Hole
Width 4.7mm
Height 15.87mm
Length 10.16mm
Series FJPF3305
Weight 2.27g
hFE Min 8
Polarity NPN
Frequency 4MHz
Lead Free Lead Free
Packaging Rail/Tube
Package/Case TO-220-3
Max Frequency 4MHz
Current Rating 4A
RoHS Compliant Yes
DC Rated Voltage 400V
Package Quantity 50
Power Dissipation 30W
Number of Elements 1
Radiation Hardening No
Transition Frequency 4MHz
Max Collector Current 4A
Max Power Dissipation 30W
Gain Bandwidth Product 4MHz
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Emitter Base Voltage (VEBO) 9V
Collector Base Voltage (VCBO) 700V
Collector-emitter Voltage-Max 1V
Collector Emitter Voltage (VCEO) 400V
Collector Emitter Breakdown Voltage 400V
Collector Emitter Saturation Voltage 1V

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