FK3303010L
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Краткое описание:
N-Channel JFET, 30V, 100mA, 3 Ohm Rds(on), SOT-723
Дополнительная информация
N-channel Silicon Junction Field-Effect Transistor (JFET) designed for small signal applications. Features a 30V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 100mA. Offers a low drain-to-source resistance (Rds On Max) of 3 Ohms. Packaged in a compact SOT-723 surface mount case, measuring 1.2mm in length, 0.8mm in width, and 0.47mm in height. Operates across a temperature range of -55°C to 85°C with a maximum power dissipation of 100mW. This component is HALOGEN FREE and ROHS COMPLIANT.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.8mm |
| Height | 0.47mm |
| Length | 1.2mm |
| Polarity | N-CHANNEL |
| Packaging | Tape and Reel |
| Rds On Max | 3R |
| Nominal Vgs | 1V |
| Package/Case | SOT-723 |
| RoHS Compliant | Yes |
| Package Quantity | 10000 |
| Input Capacitance | 12pF |
| Threshold Voltage | 1V |
| Turn-On Delay Time | 100ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 100ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6R |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Voltage (Vdss) | 30V |
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