FK3306010L
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N-Channel JFET, 60V, 100mA, 15R, SOT-723
Дополнительная информация
N-Channel Silicon Junction Field-Effect Transistor (JFET) for small signal applications. Features 60V Drain to Source Breakdown Voltage (Vdss) and 100mA Continuous Drain Current (ID). Offers 15 Ohms Drain to Source Resistance (Rds On Max: 12 Ohms) and a Gate to Source Voltage (Vgs) of 12V. This surface mount device is housed in a SOT-723 package, measuring 1.2mm in length, 0.8mm in width, and 0.47mm in height. Operates across a temperature range of -55°C to 85°C with a Max Power Dissipation of 100mW. Compliant with RoHS standards.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 0.8mm |
| Height | 0.47mm |
| Length | 1.2mm |
| Polarity | N-CHANNEL |
| Packaging | Tape and Reel |
| Rds On Max | 12R |
| Nominal Vgs | 1.2V |
| Package/Case | SOT-723 |
| RoHS Compliant | Yes |
| Package Quantity | 10000 |
| Input Capacitance | 12pF |
| Threshold Voltage | 1.2V |
| Turn-On Delay Time | 100ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 100ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 100mW |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 15R |
| Gate to Source Voltage (Vgs) | 12V |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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