FMA23N50E

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FMA23N50E - Fuji Electric
Краткое описание: 500V 20A N-Channel Power MOSFET TO-220F Through Hole
Производитель Fuji Electric
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel enhancement mode power MOSFET featuring a TO-220F package with three pins. This through-hole mounted component offers a maximum drain-source voltage of 500V and a continuous drain current of 20A. It boasts a low drain-source on-resistance of 245mΩ at 10V and a maximum power dissipation of 130W. The plastic package measures 10mm in length, 4.5mm in width, and 15mm in height, with a seated plane height of 18.7mm and a pin pitch of 2.54mm.
PCB 3
Tab Tab
ECCN EAR99
PPAP No
Jedec TO-220-F
Category Power MOSFET
HTS Code 8541290095
Mounting Through Hole
Cage Code SCT92
Pin Count 3
Automotive No
Lead Shape Through Hole
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case TO-220F
AEC Qualified No
Configuration Single
Pin Pitch (mm) 2.54
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 4.5
Package Description Transistor Outline Package Fullpak
Package Family Name TO-220
Package Height (mm) 15
Package Length (mm) 10
Seated Plane Height (mm) 18.7
Maximum Power Dissipation 130000mW
Maximum Gate Source Voltage 30V
Number of Elements per Chip 1
Maximum Drain Source Voltage 500V
Maximum Drain Source Resistance 245@10VmOhm
Maximum Continuous Drain Current 20A

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