FMMT620TA
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NPN BJT Transistor, 1.5A I(C), 80V V(BR)CEO, SOT-23
Дополнительная информация
NPN bipolar junction transistor (BJT) for surface mount applications. Features 80V collector-emitter breakdown voltage (VCEO) and 1.5A continuous collector current (IC). Operates with a 160MHz gain bandwidth product (GBW) and a maximum power dissipation of 625mW. Packaged in a SOT-23 plastic case, this silicon transistor is RoHS compliant and operates across a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4mm |
| Height | 1mm |
| Length | 3.05mm |
| Weight | 0.000282oz |
| Current | 15A |
| Voltage | 80V |
| Polarity | NPN |
| Frequency | 160MHz |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | SOT-23 |
| Max Frequency | 160MHz |
| Current Rating | 1.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Package Quantity | 1 |
| Power Dissipation | 625mW |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 160MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1.5A |
| Max Power Dissipation | 625mW |
| Gain Bandwidth Product | 160MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 1.5A |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 200mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 160mV |
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