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NPN BJT Transistor, 1A, 125V, 155MHz, TO-236-3
Дополнительная информация
NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 1A continuous collector current and a 125V collector-emitter breakdown voltage. Offers a 155MHz gain bandwidth product and a low collector-emitter saturation voltage of 165mV. Packaged in a TO-236-3 surface-mount case, this lead-free component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.3mm |
| Height | 1mm |
| Length | 2.9mm |
| Weight | 0.000282oz |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Package/Case | TO-236-3 |
| Current Rating | 1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 125V |
| Package Quantity | 10000 |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| Transition Frequency | 155MHz |
| Max Breakdown Voltage | 125V |
| Max Collector Current | 1A |
| Max Power Dissipation | 625mW |
| Gain Bandwidth Product | 155MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 5V |
| Continuous Collector Current | 1A |
| Collector Base Voltage (VCBO) | 125V |
| Collector-emitter Voltage-Max | 250mV |
| Collector Emitter Breakdown Voltage | 125V |
| Collector Emitter Saturation Voltage | 165mV |
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