FMMT722TA

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FMMT722TA - Diodes
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Краткое описание: PNP BJT Transistor, 70V, 1.5A, 200MHz, SOT-23
Производитель Diodes
Статус производства Производится (ACTIVE)

Дополнительная информация

PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-23 package. Features a 70V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current of -1.5A. Offers a maximum power dissipation of 625mW and a transition frequency of 200MHz. Designed for surface mounting with a lead-free, RoHS-compliant construction.
RoHS Compliant
Mount Surface Mount
Width 1.4mm
Height 1mm
Length 3.05mm
Weight 0.000282oz
Polarity PNP
Frequency 200MHz
Lead Free Lead Free
Packaging Tape and Reel
Package/Case SOT-23
Max Frequency 200MHz
Current Rating -1.5A
RoHS Compliant Yes
DC Rated Voltage -70V
Package Quantity 3000
Power Dissipation 625mW
Number of Elements 1
Radiation Hardening No
Reach SVHC Compliant No
Transition Frequency 200MHz
Max Breakdown Voltage 70V
Max Collector Current 1.5A
Max Power Dissipation 625mW
Gain Bandwidth Product 200MHz
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -1.5A
Collector Base Voltage (VCBO) 70V
Collector-emitter Voltage-Max 260mV
Collector Emitter Voltage (VCEO) 70V
Collector Emitter Breakdown Voltage 70V
Collector Emitter Saturation Voltage -175mV

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