FP15R12W1T4B11BOMA1
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Краткое описание:
IGBT 1.2kV 28A 130W FLANGE MOUNT
Дополнительная информация
The Infineon FP15R12W1T4B11BOMA1 is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a continuous collector current of 28A. It features a maximum power dissipation of 130W and a turn-on delay time of 55ns. The device is packaged in a flange mount configuration and is suitable for use in high-power applications. The operating temperature range is -40°C to 150°C, and the device is RoHS compliant.
| RoHS | Compliant |
| Input | Standard |
| Mount | Chassis Mount, Screw |
| Height | 12.35mm |
| Lead Free | Contains Lead |
| Packaging | Bulk |
| Halogen Free | Not Halogen Free |
| Package/Case | Module |
| NTC Thermistor | Yes |
| RoHS Compliant | Yes |
| Package Quantity | 24 |
| Input Capacitance | 890pF |
| Power Dissipation | 130W |
| Turn-On Delay Time | 55ns |
| Turn-Off Delay Time | 195ns |
| Max Collector Current | 28A |
| Max Power Dissipation | 130W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Continuous Collector Current | 28A |
| Collector-emitter Voltage-Max | 2.25V |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |
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