FQA11N90-F109
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N-Channel MOSFET, 900V, 11.4A, 960mR, TO-3P
Дополнительная информация
N-Channel Power MOSFET featuring 900V drain-to-source breakdown voltage and 11.4A continuous drain current. This single-element transistor offers a low 960mΩ drain-to-source resistance and a maximum power dissipation of 300W. Designed for through-hole mounting in TO-3P or TO-3PN packages, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 65ns turn-on delay and a 90ns fall time.
| RoHS | Compliant |
| Mount | Through Hole |
| Height | 23.8mm |
| Series | QFET® |
| Weight | 6.401g |
| Polarity | N-CHANNEL |
| Fall Time | 90ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 960mR |
| RoHS Compliant | Yes |
| Package Quantity | 30 |
| Input Capacitance | 3.5nF |
| Power Dissipation | 300W |
| Number of Channels | 1 |
| Turn-On Delay Time | 65ns |
| Turn-Off Delay Time | 165ns |
| Element Configuration | Single |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 960mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 11.4A |
| Drain to Source Voltage (Vdss) | 900V |
| Drain to Source Breakdown Voltage | 900V |
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