FQA140N10
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Краткое описание:
100V 140A N-Channel Power MOSFET, 10mR RdsOn, TO-3P
Дополнительная информация
N-Channel Power MOSFET featuring 100V drain-source breakdown voltage and 140A continuous drain current. Offers a low 10mΩ drain-source on-resistance. Operates with a 4V threshold voltage and 25V gate-source voltage. This single-element MOSFET boasts a maximum power dissipation of 375W and a maximum operating temperature of 175°C. Packaged in a TO-3P through-hole mount.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5mm |
| Height | 18.9mm |
| Length | 15.8mm |
| Series | QFET® |
| Weight | 6.401g |
| Polarity | N-CHANNEL |
| Fall Time | 360ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 10mR |
| Current Rating | 140A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 30 |
| Input Capacitance | 7.9nF |
| Power Dissipation | 375W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 75ns |
| Turn-Off Delay Time | 350ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 375W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 10mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 140A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 10mR |
| Drain to Source Breakdown Voltage | 100V |
