FQA19N60
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600V N-Channel Power MOSFET, 18.5A, 380mR, TO-3P
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 18.5A continuous drain current. This through-hole component offers a low 380mΩ drain-to-source resistance (Rds On Max) and a maximum power dissipation of 300W. Operating across a wide temperature range from -55°C to 150°C, it includes fast switching characteristics with turn-on delay of 65ns and fall time of 135ns. The MOSFET is RoHS compliant and packaged in a TO-3P package.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5mm |
| Height | 18.9mm |
| Length | 15.8mm |
| Series | QFET® |
| Current | 16A |
| Voltage | 600V |
| Polarity | N-CHANNEL |
| Fall Time | 135ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 380mR |
| Current Rating | 18.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 30 |
| Input Capacitance | 3.6nF |
| Power Dissipation | 300W |
| Threshold Voltage | 5V |
| Number of Channels | 1 |
| Turn-On Delay Time | 65ns |
| Turn-Off Delay Time | 150ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 380mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 18.5A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
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