FQA30N40
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Краткое описание:
400V 30A N-Channel Power MOSFET, 140mR, TO-3P
Дополнительная информация
N-Channel Power MOSFET, QFET® series, featuring a 400V drain-source breakdown voltage and a continuous drain current of 30A. Offers a low drain-source on-resistance of 140mΩ at a 10V gate-source voltage. This through-hole mounted component has a maximum power dissipation of 290W and operates within a temperature range of -55°C to 150°C. Packaged in a TO-3P, it includes fast switching characteristics with turn-on delay time of 80ns and fall time of 170ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | QFET® |
| Weight | 6.401g |
| Polarity | N-CHANNEL |
| Fall Time | 170ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 140mR |
| Current Rating | 30A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 400V |
| Package Quantity | 30 |
| Input Capacitance | 4.4nF |
| Power Dissipation | 290W |
| Turn-On Delay Time | 80ns |
| Turn-Off Delay Time | 190ns |
| Element Configuration | Single |
| Max Power Dissipation | 290W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 140mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 400V |
| Drain-source On Resistance-Max | 140MR |
| Drain to Source Breakdown Voltage | 400V |
