FQA32N20C
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Краткое описание:
200V 32A N-Channel Power MOSFET, 82mR RdsOn, TO-3P
Дополнительная информация
N-channel Power MOSFET featuring 200V drain-source breakdown voltage and 32A continuous drain current. This single-element MOSFET offers a low 82mΩ drain-source resistance (Rds On Max) and 204W maximum power dissipation. Designed for through-hole mounting in a TO-3P package, it operates within a -55°C to 150°C temperature range and boasts fast switching speeds with a 25ns turn-on delay. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5mm |
| Height | 18.9mm |
| Length | 15.8mm |
| Series | QFET® |
| Weight | 6.401g |
| Polarity | N-CHANNEL |
| Fall Time | 210ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 82mR |
| Current Rating | 32A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 30 |
| Input Capacitance | 2.22nF |
| Power Dissipation | 204W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 25ns |
| Turn-Off Delay Time | 245ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 204W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 82mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain to Source Breakdown Voltage | 200V |
