FQA40N25
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Краткое описание:
N-Channel MOSFET 250V 40A 70mR TO-3P
Дополнительная информация
N-Channel Power MOSFET featuring 250V drain-source breakdown voltage and 40A continuous drain current. This single-element device offers a low 70mΩ drain-to-source resistance (Rds On Max) and 280W maximum power dissipation. Designed for through-hole mounting in a TO-3P package, it operates within a temperature range of -55°C to 150°C and includes fast switching characteristics with turn-on delay of 70ns and fall time of 165ns.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5mm |
| Height | 18.9mm |
| Length | 15.8mm |
| Series | QFET® |
| Weight | 6.401g |
| Polarity | N-CHANNEL |
| Fall Time | 165ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 70mR |
| Current Rating | 40A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 250V |
| Package Quantity | 30 |
| Input Capacitance | 4nF |
| Power Dissipation | 280W |
| Threshold Voltage | 5V |
| Number of Elements | 1 |
| Turn-On Delay Time | 70ns |
| Turn-Off Delay Time | 120ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 280W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 70mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 250V |
| Drain to Source Breakdown Voltage | 250V |
