FQA65N20
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Краткое описание:
N-Channel MOSFET, 200V, 65A, 32mR, TO-3P
Дополнительная информация
N-Channel Power MOSFET featuring 200V drain-source breakdown voltage and 65A continuous drain current. This single-element MOSFET offers a low on-resistance of 32mΩ at a 10V gate-source voltage. With a maximum power dissipation of 310W and a maximum operating temperature of 150°C, it is suitable for demanding applications. The component is packaged in a TO-3P through-hole mount and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5mm |
| Height | 18.9mm |
| Length | 15.8mm |
| Series | SuperFET™ |
| Weight | 6.401g |
| Polarity | N-CHANNEL |
| Fall Time | 275ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 260mR |
| Current Rating | 65A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 30 |
| Input Capacitance | 2.25nF |
| Power Dissipation | 310W |
| Threshold Voltage | 5V |
| Turn-On Delay Time | 120ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 340ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 310W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 32mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 65A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 200V |
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