FQA70N10
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N-Channel MOSFET, 100V, 70A, 23mR, TO-3P
Дополнительная информация
N-channel Power MOSFET featuring 100V drain-source breakdown voltage and a 70A continuous drain current. This QFET® series device offers a low 23mΩ drain-source on-resistance at a nominal 4V gate-source voltage. With a maximum power dissipation of 214W and an operating temperature range of -55°C to 175°C, it is suitable for demanding applications. The TO-3P package facilitates through-hole mounting.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 5mm |
| Height | 18.9mm |
| Length | 15.8mm |
| Series | QFET® |
| Weight | 6.401g |
| Polarity | N-CHANNEL |
| Fall Time | 160ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 23mR |
| Nominal Vgs | 4V |
| Current Rating | 70A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 30 |
| Input Capacitance | 3.3nF |
| Power Dissipation | 214W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 30ns |
| Dual Supply Voltage | 100V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 130ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 214W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 25mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 23mR |
| Drain to Source Breakdown Voltage | 100V |
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