FQB11P06TM
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Краткое описание:
P-Channel MOSFET, -60V, 11.4A, 175mΩ, D2PAK, Tape & Reel
Дополнительная информация
P-channel Power MOSFET, featuring a -60V drain-source breakdown voltage and a continuous drain current of 11.4A. This surface-mount device offers a low on-resistance of 140mΩ, a maximum power dissipation of 3.13W, and operates within a temperature range of -55°C to 175°C. Packaged in a D2PAK (TO-263-3) on an 800-piece tape and reel, it boasts fast switching characteristics with turn-on delay times of 6.5ns and fall times of 45ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | QFET™ |
| Weight | 1.31247g |
| Polarity | P-CHANNEL |
| Fall Time | 45ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 175mR |
| Package/Case | TO-263-3 |
| Current Rating | -11.4A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 800 |
| Input Capacitance | 550pF |
| Power Dissipation | 3.13W |
| Turn-On Delay Time | 6.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15ns |
| Element Configuration | Single |
| Max Power Dissipation | 3.13W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 140mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 11.4A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | -60V |
