FQB1P50TM
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Краткое описание:
P-Channel MOSFET, -500V, -1.5A, 10.5 Ohm, D2PAK, SM
Дополнительная информация
P-channel Power MOSFET, QFET® series, featuring a -500V drain-to-source breakdown voltage and a continuous drain current of 1.5A. This surface-mount component offers a low Rds(on) of 10.5 Ohms and a maximum power dissipation of 3.13W. Designed for high-efficiency switching applications, it operates within a temperature range of -55°C to 150°C and is packaged in a D2PAK (TO-263-3) for tape and reel distribution. Key switching parameters include a 9ns turn-on delay and a 30ns fall time, with a gate-to-source voltage rating of 30V.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.67mm |
| Height | 4.83mm |
| Length | 9.65mm |
| Series | QFET® |
| Weight | 1.31247g |
| Polarity | P-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 10.5R |
| Package/Case | TO-263-3 |
| Current Rating | -1.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -500V |
| Package Quantity | 1 |
| Input Capacitance | 350pF |
| Power Dissipation | 3.13W |
| Turn-On Delay Time | 9ns |
| Turn-Off Delay Time | 27ns |
| Element Configuration | Single |
| Max Power Dissipation | 3.13W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 8R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | -500V |
