FQB22P10TM
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Краткое описание:
P-Channel MOSFET -100V, -22A, 125mR, D2PAK, SMT
Дополнительная информация
P-Channel MOSFET featuring -100V drain-source breakdown voltage and 22A continuous drain current. Offers a low 125mΩ drain-source on-resistance and 3.75W maximum power dissipation. Designed for surface mounting in a D2PAK package, this single-element transistor operates from -55°C to 175°C. Key electrical characteristics include a 1.5nF input capacitance and a -4V threshold voltage.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | QFET® |
| Weight | 1.31247g |
| Polarity | P-CHANNEL |
| Fall Time | 110ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 125mR |
| Termination | SMD/SMT |
| Package/Case | D2PAK |
| Current Rating | -22A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Package Quantity | 1 |
| Input Capacitance | 1.5nF |
| Power Dissipation | 3.75W |
| Threshold Voltage | -4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 17ns |
| Dual Supply Voltage | 100V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 3.75W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 125mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 125mR |
| Drain to Source Breakdown Voltage | -100V |
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