FQB27P06TM
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Краткое описание:
P-Channel MOSFET -60V -27A 70mR D2PAK
Дополнительная информация
P-channel Power MOSFET featuring a -60V drain-source breakdown voltage and a continuous drain current of 27A. This surface-mount device offers a maximum drain-source on-resistance of 70mΩ and a typical threshold voltage of -4V. With a maximum power dissipation of 120W and an operating temperature range of -55°C to 175°C, it is packaged in a D2PAK (TO-263) for tape and reel delivery. Key switching characteristics include a turn-on delay time of 18ns and a fall time of 90ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | QFET® |
| Weight | 1.31247g |
| Polarity | P-CHANNEL |
| Fall Time | 90ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 70mR |
| Termination | SMD/SMT |
| Package/Case | TO-263 |
| Current Rating | -27A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 800 |
| Input Capacitance | 1.4nF |
| Power Dissipation | 3.75W |
| Threshold Voltage | -4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 18ns |
| Dual Supply Voltage | 60V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 120W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 55mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 27A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 70MR |
| Drain to Source Breakdown Voltage | -60V |
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