FQB32N12V2TM
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Краткое описание:
120V 32A N-CH MOSFET, 50mR Rds(on), TO-263
Дополнительная информация
N-channel MOSFET, 120V drain-source breakdown voltage, 32A continuous drain current, 50mΩ Rds On. Features 150W max power dissipation, 175°C max operating temperature, and TO-263-3 (D2PAK) surface mount package. Includes 16ns turn-on delay, 158ns fall time, and 1.86nF input capacitance. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 4.95mm |
| Series | QFET® |
| Polarity | N-CHANNEL |
| Fall Time | 158ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 50mR |
| Package/Case | TO-263-3 |
| Current Rating | 32A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 120V |
| Package Quantity | 800 |
| Input Capacitance | 1.86nF |
| Power Dissipation | 3.75W |
| Number of Channels | 1 |
| Turn-On Delay Time | 16ns |
| Turn-Off Delay Time | 114ns |
| Max Power Dissipation | 150W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 50mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Voltage (Vdss) | 120V |
| Drain to Source Breakdown Voltage | 120V |
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