FQB33N10LTM
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Краткое описание:
N-Channel MOSFET, 100V, 33A, 52mR, D2PAK, Logic Level
Дополнительная информация
N-Channel Power MOSFET, QFET® series, featuring 100V drain-source breakdown voltage and 33A continuous drain current. This surface-mount device in a D2PAK package offers a low 52mΩ drain-source on-resistance. It operates with a 2V threshold voltage and includes fast switching characteristics with 17ns turn-on delay and 70ns turn-off delay. Maximum power dissipation is 127W, with a maximum operating temperature of 175°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | QFET® |
| Weight | 1.31247g |
| Polarity | N-CHANNEL |
| Fall Time | 120ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 52mR |
| Package/Case | D2PAK |
| Current Rating | 33A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 800 |
| Input Capacitance | 1.63nF |
| Power Dissipation | 3.75W |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 127W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 52mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 33A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 52MR |
| Drain to Source Breakdown Voltage | 100V |
