FQB33N10TM
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N-Channel MOSFET, 100V, 33A, 52mR, D2PAK, Surface Mount
Дополнительная информация
N-Channel Power MOSFET featuring 100V drain-source breakdown voltage and 33A continuous drain current. This single-element MOSFET offers a low 52mΩ drain-source on-resistance and a 3.75W maximum power dissipation. Designed for surface mounting in a D2PAK package, it operates from -55°C to 175°C and includes fast switching characteristics with a 15ns turn-on delay. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | QFET® |
| Weight | 1.31247g |
| Polarity | N-CHANNEL |
| Fall Time | 110ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 52mR |
| Package/Case | D2PAK |
| Current Rating | 33A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 1 |
| Input Capacitance | 1.5nF |
| Power Dissipation | 3.75W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 15ns |
| Turn-Off Delay Time | 80ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 3.75W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 52mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 33A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 52MR |
| Drain to Source Breakdown Voltage | 100V |
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