FQB34N20LTM
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Краткое описание:
N-Channel Power MOSFET, 200V, 31A, 75mR, D2PAK, Logic Level
Дополнительная информация
N-channel Power MOSFET, logic level, 200V drain-source breakdown voltage, 31A continuous drain current, and 75mΩ maximum drain-source on-resistance. Features include a D2PAK surface mount package, 180W maximum power dissipation, and a 2V nominal gate-source threshold voltage. Operating temperature range is -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | QFET® |
| Weight | 1.31247g |
| Polarity | N-CHANNEL |
| Fall Time | 370ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 75mR |
| Nominal Vgs | 2V |
| Termination | SMD/SMT |
| Package/Case | D2PAK |
| Current Rating | 31A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 1 |
| Input Capacitance | 3.9nF |
| Power Dissipation | 3.13W |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 45ns |
| Dual Supply Voltage | 200V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 170ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 180W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 75mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 31A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 75mR |
| Drain to Source Breakdown Voltage | 200V |
