FQB50N06TM
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Краткое описание:
N-Channel MOSFET, 60V, 50A, 22mR, D2PAK, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, QFET® series, featuring a 60V drain-source breakdown voltage and a continuous drain current of 50A. This surface-mount component offers a low on-resistance of 22mΩ, a maximum power dissipation of 120W, and operates within a temperature range of -55°C to 175°C. Packaged in a D2PAK, it includes fast switching characteristics with turn-on delay time of 15ns and fall time of 65ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | QFET® |
| Weight | 1.31247g |
| Polarity | N-CHANNEL |
| Fall Time | 65ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 22mR |
| Package/Case | D2PAK |
| Current Rating | 50A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Input Capacitance | 1.54nF |
| Power Dissipation | 3.75W |
| Number of Channels | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Element Configuration | Single |
| Max Power Dissipation | 120W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 22mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
