FQB6N80TM
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Краткое описание:
800V 5.8A N-Channel Power MOSFET D2PAK
Дополнительная информация
N-Channel Power MOSFET, QFET® series, featuring 800V drain-source breakdown voltage and 5.8A continuous drain current. This surface-mount device offers a low 1.95Ω drain-source on-resistance and a maximum power dissipation of 3.13W. Designed for efficient switching, it exhibits typical turn-on delay of 30ns and fall time of 45ns. Packaged in a D2PAK (TO-263-3) for tape and reel distribution, this RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | QFET® |
| Weight | 1.31247g |
| Polarity | N-CHANNEL |
| Fall Time | 45ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.95R |
| Package/Case | TO-263-3 |
| Current Rating | 5.8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| Package Quantity | 1 |
| Input Capacitance | 1.5nF |
| Power Dissipation | 3.13W |
| Threshold Voltage | 5V |
| Turn-On Delay Time | 30ns |
| Turn-Off Delay Time | 65ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 3.13W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.95R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 5.8A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 1.95R |
| Drain to Source Breakdown Voltage | 800V |
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