FQB9N50CTM
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Краткое описание:
500V 9A N-Channel Power MOSFET, 800mR, D2PAK, Tape & Reel
Дополнительная информация
N-Channel Power MOSFET, QFET® series, featuring a 500V drain-source breakdown voltage and a continuous drain current of 9A. This surface-mount component offers a maximum drain-source on-resistance of 800mΩ. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 135W. The D2PAK package is supplied on an 800-piece tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | QFET® |
| Weight | 1.31247g |
| Polarity | N-CHANNEL |
| Fall Time | 64ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 800mR |
| Package/Case | TO-263 |
| Current Rating | 9A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 800 |
| Input Capacitance | 1.03nF |
| Power Dissipation | 135W |
| Threshold Voltage | 2V |
| Turn-On Delay Time | 18ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 93ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 135W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 800mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 800mR |
| Drain to Source Breakdown Voltage | 500V |
