FQD10N20CTM
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Краткое описание:
200V N-Channel MOSFET, 7.8A, 360mR, DPAK, Tape & Reel
Дополнительная информация
N-Channel Power MOSFET, QFET® series, featuring a 200V Drain-Source Breakdown Voltage and 7.8A Continuous Drain Current. This surface mount device offers a low 360mΩ Drain-Source On-Resistance and 50W maximum power dissipation. Operating across a wide temperature range from -55°C to 150°C, it boasts fast switching speeds with a 11ns turn-on delay and 72ns fall time. The DPAK package ensures efficient thermal management for demanding applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.1mm |
| Height | 2.3mm |
| Length | 6.6mm |
| Series | QFET® |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 72ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 360mR |
| Package/Case | DPAK |
| Current Rating | 7.8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 1 |
| Input Capacitance | 510pF |
| Power Dissipation | 50W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Turn-On Delay Time | 11ns |
| Turn-Off Delay Time | 70ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 50W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 360mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 7.8A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 360mR |
| Drain to Source Breakdown Voltage | 200V |
