FQD10N20LTM
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Краткое описание:
N-Channel MOSFET, 200V, 7.6A, 380mΩ, Logic Level, DPAK
Дополнительная информация
N-Channel Power MOSFET, Logic Level, 200V Vds, 7.6A Continuous Drain Current. Features 380mΩ maximum Drain-Source On-Resistance, 2.5W power dissipation, and 13ns turn-on delay. Packaged in a TO-252-3 (DPAK) surface-mount package, this RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 2.517mm |
| Series | QFET™ |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 95ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 360mR |
| Package/Case | TO-252-3 |
| Current Rating | 7.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 2500 |
| Input Capacitance | 830pF |
| Power Dissipation | 2.5W |
| Number of Channels | 1 |
| Turn-On Delay Time | 13ns |
| Turn-Off Delay Time | 50ns |
| Element Configuration | Single |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 290mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 7.6A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 380MR |
| Drain to Source Breakdown Voltage | 200V |
