FQD12N20LTM
Производится
Увеличить
Краткое описание:
N-Channel MOSFET, 200V, 9A, 280mR, DPAK, Logic Level
Дополнительная информация
N-Channel Power MOSFET, Logic Level, QFET® series, featuring a 200V drain-to-source breakdown voltage and 9A continuous drain current. This surface-mount device offers a low 280mΩ drain-to-source resistance at a nominal 2V gate-source voltage. Designed for efficient switching, it exhibits fast switching times with turn-on delay of 15ns and fall time of 120ns. Packaged in a DPAK for thermal performance, it operates from -55°C to 150°C with a maximum power dissipation of 55W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.1mm |
| Height | 2.3mm |
| Length | 6.6mm |
| Series | QFET® |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 120ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 280mR |
| Nominal Vgs | 2V |
| Package/Case | DPAK |
| Current Rating | 9A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 1 |
| Input Capacitance | 1.08nF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 60ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 55W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 280mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain to Source Breakdown Voltage | 200V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
