FQD13N06LTM
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N-Channel Power MOSFET, 60V, 11A, 115mR, DPAK, Logic Level
Дополнительная информация
N-Channel Power MOSFET, Logic Level, QFET® series, featuring 60V drain-source breakdown voltage and 11A continuous drain current. Offers a low 115mΩ maximum drain-source on-resistance. Designed for surface mounting in a DPAK package, this single-element transistor operates from -55°C to 150°C with a 2.5W maximum power dissipation. Includes fast switching characteristics with 8ns turn-on delay and 40ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | QFET® |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 115mR |
| Package/Case | DPAK |
| Current Rating | 11A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1 |
| Input Capacitance | 350pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 2.5V |
| Number of Elements | 1 |
| Turn-On Delay Time | 8ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 115mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 115mR |
| Drain to Source Breakdown Voltage | 60V |
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