FQD17N08LTM
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N-Channel MOSFET, 80V, 12.9A, 100mR, Logic Level, DPAK
Дополнительная информация
N-Channel Power MOSFET, Logic Level, QFET® series, featuring 80V drain-source breakdown voltage and 12.9A continuous drain current. This surface-mount component offers a low 100mΩ drain-source on-resistance and a maximum power dissipation of 40W. Designed for efficient switching, it exhibits fast turn-on (7ns) and turn-off (20ns) delay times with a 75ns fall time. Packaged in a TO-252-3 (DPAK) for tape and reel distribution, it operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | QFET™ |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 75ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 100mR |
| Package/Case | TO-252-3 |
| Current Rating | 12.9A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Package Quantity | 1 |
| Input Capacitance | 520pF |
| Power Dissipation | 2.5W |
| Number of Elements | 1 |
| Turn-On Delay Time | 7ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 20ns |
| Element Configuration | Single |
| Max Power Dissipation | 40W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 100mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 12.9A |
| Drain to Source Voltage (Vdss) | 80V |
| Drain to Source Breakdown Voltage | 80V |
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