FQD17P06TM
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Краткое описание:
P-Channel MOSFET, -60V, -12A, 135mR, DPAK, Surface Mount
Дополнительная информация
P-channel Power MOSFET, QFET® series, featuring a -60V drain-source breakdown voltage and a continuous drain current of 12A. This single-element transistor offers a maximum drain-source on-resistance of 135mΩ. Packaged in a DPAK surface-mount configuration, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 44W. Key electrical characteristics include a 900pF input capacitance and a threshold voltage of -4V.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | QFET® |
| Weight | 0.26037g |
| Polarity | P-CHANNEL |
| Fall Time | 60ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 135mR |
| Package/Case | DPAK |
| Current Rating | -12A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Package Quantity | 2500 |
| Input Capacitance | 900pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | -4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 44W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 135mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 135mR |
| Drain to Source Breakdown Voltage | -60V |
