FQD19N10TM
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N-Channel MOSFET, 100V, 15.6A, 100mR, DPAK, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, QFET® series, featuring 100V drain-source breakdown voltage and 15.6A continuous drain current. This surface-mount device offers a low 63mΩ drain-source on-resistance and a maximum power dissipation of 2.5W. Designed for efficient switching, it includes fast switching times with turn-on delay of 7.5ns and fall time of 65ns. Packaged in a DPAK for tape and reel deployment, this component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.1mm |
| Height | 2.3mm |
| Length | 6.6mm |
| Series | QFET™ |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 65ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 100mR |
| Package/Case | DPAK |
| Current Rating | 15.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 2500 |
| Input Capacitance | 780pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 7.5ns |
| Turn-Off Delay Time | 20ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 100mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 15.6A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 100MR |
| Drain to Source Breakdown Voltage | 100V |
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