FQD2P40TM
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Краткое описание:
P-Channel MOSFET, -400V, 1.56A, 6.5 Ohm, DPAK, SMT
Дополнительная информация
P-channel Power MOSFET featuring -400V drain-to-source breakdown voltage and 1.56A continuous drain current. This surface-mount device offers 6.5Ω drain-to-source resistance (Rds On Max) and a maximum power dissipation of 2.5W. Designed for high-voltage applications, it operates within a -55°C to 150°C temperature range and is packaged in a TO-252-3 (DPAK) on a 2500-piece tape and reel. Key switching characteristics include a 9ns turn-on delay and 25ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 2.517mm |
| Series | QFET™ |
| Current | 18A |
| Voltage | 400V |
| Polarity | P-CHANNEL |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 6.5R |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 350pF |
| Power Dissipation | 2.5W |
| Number of Channels | 1 |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 22ns |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 1.56A |
| Drain to Source Voltage (Vdss) | 400V |
| Drain to Source Breakdown Voltage | -400V |
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