FQD3P50TM
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Краткое описание:
P-Channel MOSFET, -500V, -2.1A, 4.9R, DPAK, SMT
Дополнительная информация
P-channel Power MOSFET featuring a -500V drain-source breakdown voltage and a continuous drain current of -2.1A. This surface-mount device offers a low drain-source on-resistance of 4.9 Ohms. Key specifications include a 12ns turn-on delay, 35ns turn-off delay, and 45ns fall time. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 50W. Packaged in DPAK for tape and reel applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | QFET® |
| Current | 18A |
| Voltage | 400V |
| Polarity | P-CHANNEL |
| Fall Time | 45ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 4.9R |
| Package/Case | DPAK |
| Current Rating | -2.1A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -500V |
| Package Quantity | 2500 |
| Input Capacitance | 660pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | -5V |
| Number of Elements | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 50W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.9R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 2.1A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 4.9R |
| Drain to Source Breakdown Voltage | -500V |
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