FQD4P40TM
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Краткое описание:
P-Channel MOSFET, -400V, -2.7A, 3.1R, DPAK, Surface Mount
Дополнительная информация
P-channel Power MOSFET with -400V drain-to-source breakdown voltage and 2.7A continuous drain current. Features 3.1 Ohm drain-to-source resistance (Rds On Max) and 2.5W power dissipation. This single-element, surface-mount DPAK package offers fast switching with turn-on delay of 13ns and fall time of 37ns. Operates from -55°C to 150°C, is RoHS compliant, and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 2.517mm |
| Series | QFET™ |
| Weight | 0.26037g |
| Polarity | P-CHANNEL |
| Fall Time | 37ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3.1R |
| Package/Case | DPAK |
| Current Rating | -2.7A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -400V |
| Package Quantity | 1 |
| Input Capacitance | 680pF |
| Power Dissipation | 2.5W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 35ns |
| Element Configuration | Single |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.1R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Voltage (Vdss) | 400V |
| Drain to Source Breakdown Voltage | -400V |
