FQD5N20LTM
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Краткое описание:
N-Channel Power MOSFET, 200V, 3.8A, 1.2 Ohm, Logic Level, DPAK
Дополнительная информация
N-Channel Power MOSFET, logic-level, 200V drain-source breakdown voltage, 3.8A continuous drain current, and 1.2Ω maximum drain-source on-resistance. Features include a TO-252-3 (DPAK) surface-mount package, 2.5W maximum power dissipation, and a 20V gate-source voltage rating. Operating temperature range spans -55°C to 150°C. This RoHS compliant component is supplied on a 2500-piece tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | QFET™ |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 50ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.2R |
| Package/Case | TO-252-3 |
| Current Rating | 3.8A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 2500 |
| Input Capacitance | 325pF |
| Power Dissipation | 2.5W |
| Number of Elements | 1 |
| Turn-On Delay Time | 9ns |
| Turn-Off Delay Time | 15ns |
| Element Configuration | Single |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.2R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 3.8A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain to Source Breakdown Voltage | 200V |
