FQD5N60CTM
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Краткое описание:
600V 2.8A N-Channel Power MOSFET, DPAK, 2.5R
Дополнительная информация
N-Channel Power MOSFET, QFET™ series, featuring a 600V drain-source breakdown voltage and a continuous drain current of 2.8A. This surface-mount device offers a low drain-source on-resistance of 2.5Ω and a maximum power dissipation of 2.5W. Designed with a DPAK package, it operates within a temperature range of -55°C to 150°C and includes fast switching characteristics with turn-on delay time of 10ns and fall time of 46ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | QFET™ |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 46ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.5R |
| Package/Case | DPAK |
| Current Rating | 5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 1 |
| Input Capacitance | 670pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 38ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.5R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 2.8A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 2.5R |
| Drain to Source Breakdown Voltage | 600V |
