FQD5P10TM
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Краткое описание:
P-Channel MOSFET, -100V, -3.6A, 1.05 Ohm, DPAK, SM
Дополнительная информация
P-Channel Power MOSFET, QFET® series, featuring a -100V drain-source breakdown voltage and a continuous drain current of -3.6A. This surface-mount device offers a low on-resistance of 1.05Ω and a maximum power dissipation of 25W. Operating across a wide temperature range from -55°C to 150°C, it boasts fast switching speeds with turn-on delay of 9ns and fall time of 30ns. Packaged in a TO-252 (DPAK) case, this RoHS compliant component is supplied on a 2500-reel tape and reel.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.22mm |
| Height | 2.39mm |
| Length | 6.73mm |
| Series | QFET® |
| Current | 36A |
| Voltage | 100V |
| Polarity | P-CHANNEL |
| Fall Time | 30ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.05R |
| Package/Case | TO-252 |
| Current Rating | -3.6A |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
| Package Quantity | 1 |
| Input Capacitance | 250pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | -2V |
| Number of Channels | 1 |
| Turn-On Delay Time | 9ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 25W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.05R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | -3.6A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | -100V |
