FQD6N40CTM
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Краткое описание:
400V 4.5A N-CH MOSFET, 1 Ohm, DPAK, QFET
Дополнительная информация
N-Channel Power MOSFET, QFET® series, featuring a 400V drain-source breakdown voltage and 4.5A continuous drain current. This single-element MOSFET offers a low 1Ω drain-source on-resistance and is housed in a surface-mount DPAK package. Operating from -55°C to 150°C, it boasts a 2.5W maximum power dissipation and is RoHS compliant. Key switching characteristics include a 13ns turn-on delay and 38ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 6.1mm |
| Height | 2.3mm |
| Length | 6.6mm |
| Series | QFET® |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 38ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1R |
| Package/Case | DPAK |
| Current Rating | 4.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 400V |
| Package Quantity | 2500 |
| Input Capacitance | 625pF |
| Power Dissipation | 2.5W |
| Threshold Voltage | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 21ns |
| Reach SVHC Compliant | No |
| Element Configuration | Single |
| Max Power Dissipation | 2.5W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 400V |
| Drain-source On Resistance-Max | 1R |
| Drain to Source Breakdown Voltage | 400V |
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