FQD7N20TM
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Краткое описание:
200V N-CH MOSFET, 5.3A, 690mR, DPAK, SMT
Дополнительная информация
N-channel MOSFET, 200V Drain-Source Voltage (Vdss), 5.3A Continuous Drain Current (ID). Features 690mΩ maximum Drain-Source On-Resistance (Rds On) and 45W maximum power dissipation. Surface mount TO-252-3 (DPAK) package with 35ns fall time and 15ns turn-off delay time. Operates from -55°C to 150°C, with 400pF input capacitance and 30V Gate-Source Voltage (Vgs) rating. Lead-free and RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | QFET® |
| Weight | 0.26037g |
| Polarity | N-CHANNEL |
| Fall Time | 35ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 690mR |
| Package/Case | TO-252-3 |
| Current Rating | 5.3A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| Package Quantity | 2500 |
| Input Capacitance | 400pF |
| Power Dissipation | 2.5W |
| Turn-Off Delay Time | 15ns |
| Element Configuration | Single |
| Max Power Dissipation | 45W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 690mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain to Source Breakdown Voltage | 200V |
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